inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2081 description high dc current gain- : h fe = 2000(min)@ (v ce = 4v, i c = 5a) large current capability complement to type 2sb1259 applications driver for solenoid, motor and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 6 v i c collector current-continuous 10 a i cm collector current-pulse 15 a i b base current-continuous 1 a p c collector power dissipation @t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2081 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 120 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 5ma b 1.5 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 5ma b 2.0 v i cbo collector cutoff current v cb = 120v; i e = 0 10 a i ebo emitter cutoff current v eb = 6v; i c = 0 10 ma h fe dc current gain i c = 5a; v ce = 4v 2000 c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 95 pf f t current-gain?bandwidth product i e = -0.5a; v ce = 12v 60 mhz isc website www.iscsemi.cn 2
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